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| UNISONIC TECHNOLOGIES CO., LTD 2SB834 HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. PNP SILICON TRANSISTOR Lead-Free: 2SB834L Halogen Free: 2SB834G ORDERING INFORMATION Normal 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T Ordering Number Lead Free 2SB834L-x-T60-K 2SB834L-X-TA3-T 2SB834L-x-TF3-T Halogen Free 2SB834G-x-T60-K 2SB834G-x-TA3-T 2SB834G-x-TF3-T Package TO-126 TO-220 TO-220F Pin Assignment 1 2 3 E C B B C E B C E Packing Bulk Tube Tube www.unisonic.com.tw Copyright (c) 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-018.D 2SB834 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation (TC=25C) TO-126/TO-220F TO-220 SYMBOL VCBO VCEO VEBO IC IB PC PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified ) RATINGS -60 -60 -7 -3 -0.5 25 30 UNIT V V V A A W W Junction Temperature TJ +125 C Storage Temperature TSTG -40 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain Current Gain Bandwidth Product SYMBOL BVCEO ICBO IEBO VCE(SAT) VBE(ON) hFE1 hFE2 fT TEST CONDITIONS IC=-50mA VCB=-60V VEB=-7V IC=-3A, IB=0.3A VCE=-5V, IC=-0.5A IC=-0.5A, VCE=-5V IC=-3A, VCE=-5V VCE=-5V, IC=-0.5A MIN -60 TYP MAX -100 -100 -1 -1 300 UNIT V A A V V -0.7 60 20 9 MHZ CLASSIFICATION of hFE1 RANK RANGE O 60-120 Y 100-200 GR 150-300 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R204-018.D 2SB834 TYPICAL CHARACTERISTICS Power Derating 40 35 -3.0 PNP SILICON TRANSISTOR Collector Current vs. Collector-Emitter Voltage -70 -80 -60 -50 -40 -30 -20 IB = -10mA Power Dissipation, PD (W) 30 25 20 15 10 5 0 0 25 50 75 100 125 150 Collector Current, IC (A) -2.0 TO-220 TO-126/TO-220F -1.0 TC=25C 0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 Temperature, TC (C) DC Current Gain 300 Collector-Emitter Voltage, VCE (V) Collector Current vs. Base-Emitter Voltage -3.0 VCE = 5.0V Collector Current, IC (A) TC=100C TC=25C VCE = 5.0V DC Current Cain, hFE TC=-25C 100 50 30 -2.0 TC=100C 25C -25C -1.0 10 -2 -5 -10 -20 -50 -100 -200 -500 -1k -3k 0 -0.4 -0.8 -1.2 -1.6 Collector Current, IC (mA) Collector-Emitter Saturation Voltage vs. Collector Current -1.0 Common Emitter -0.4 IC/IB = 10 Collector Current, IC (A) Base-Emitter Voltage, VBE (V) Active-Region Safe Operating AREA (SOA) 100ms 10ms 1ms DC Collector-Emitter Saturation Voltage, VCE(SAT) (V) -10 -5.0 -2.0 -1.0 -0.5 -0.2 -0.1 -0.05 TC=100C 25C -25C -0.2 -0.1 -1.0 -0.02 -2 Bonding Wire Limit Second Breakdown Limit Thermally Limited at TC=25C(Single Pulse) -2.0 -5.0-7.0-10 -20 -50-70-100 -5 -10 -20 -50-100-200 -500 -1k -2k -3k Collector Current, IC (mA) Collector Emitter Voltage, VCE (V) 3 of 4 QW-R204-018.D UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2SB834 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R204-018.D |
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